On Vertical Drag Defects Formation During Direct Chill (DC) Casting of Aluminum BilletsCARLBERG, Torbjörn; JARFORS, Anders E. W.Metallurgical and materials transactions. B, Process metallurgy and materials processing science. 2014, Vol 45, Num 1, pp 175-181, issn 1073-5615, 7 p.Article

Formation mechanism of defects in annealed InPYUJIE HAN; XUNLANG LIU; JINGHUA JIAO et al.SPIE proceedings series. 1998, pp 346-353, isbn 0-8194-2873-6Conference Paper

On the defect generation and low voltage extrapolation of Q_BDin SiO₂/HfO₂ stacksDEGRAEVE, R; CRUPI, F; KWAK, D. H et al.Symposium on VLSI Technology. sd, pp 140-141, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

DISPLACED CHARGE AND FORMATION ENERGIES OF POINT DEFECTS IN METALSMARCH NH.1973; J. PHYS. F; G.B.; DA. 1973; VOL. 3; NO 2; PP. 233-247; BIBL. 36 REF.Serial Issue

Influence of gas phase composition on the defects formation in lithium niobateTSIRLIN, M.Journal of materials science. 2004, Vol 39, Num 9, pp 3187-3189, issn 0022-2461, 3 p.Article

The behaviour of helium in metals = Comportement de l'hélium dans les métauxNANDEDKAR, R. V.Transactions of the Indian Institute of Metals. 1985, Vol 38, Num 1, pp 64-75, issn 0019-493XArticle

Positron trapping in mechanically deformed titanium = Capture des positons dans du titane ayant subi une déformation mécanique = Positroneneinfang in mechanisch verformtem TitanMCGETRICK, M.J; COLEMAN, C.F; HUGHES, A.E et al.Physica status solidi. A. Applied research. 1982, Vol 72, Num 2, pp K185-K188, issn 0031-8965Article

The sensitivity of thermal donor generation in silicon to self-interstitial sinksVORONKOV, V. V; VORONKOVA, G. I; BATUNINA, A. V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3899-3906, issn 0013-4651Article

Oxygen precipitation and microdefects in Czochralski-grown silicon crystals = Sauerstoffausscheidung und Mikrodefekte in Czochralski-gezogenen SiliziumkristallenYASUTAKE, K; UMENO, M; KAWABE, H et al.Physica status solidi. A. Applied research. 1984, Vol 83, Num 1, pp 207-217, issn 0031-8965Article

The use of ion scattering for the study of radiation damage in metals and semiconductors. I: High energy scattering studies. II: Low energy scattering studies of ion bombardment induced surface damage = Utilisation de la diffusion d'ions pour l'étude des défauts d'irradiation dans les métaux et les semiconducteurs. I: Etudes de diffusion à haute énergie. II: Etudes de diffusion à basse énergie des défauts de surface induits par irradiation avec des ionsARMOUR, D. G.Vacuum. 1982, Vol 32, Num 9, issn 0042-207X, 573Article

Forty years study of fivefold twinned structures in small particles and thin filmsHOFMEISTER, H.Crystal research and technology (1979). 1998, Vol 33, Num 1, pp 3-25, issn 0232-1300Article

Dynamics of formation of defects in annealed InPHAN, Y; LIU, X; JIAO, J et al.SPIE proceedings series. 1998, pp 5-8, isbn 0-8194-3012-9Conference Paper

COMMENTS ON VACANCIES AND MELTING.GORECKI T.1977; SCRIPTA METALLURG.; E.U.; DA. 1977; VOL. 11; NO 12; PP. 1051-1053; BIBL. 18 REF.Article

First-principles calculation of intrinsic defect formation volumes in siliconCENTONI, Scott A; SADIGH, Babak; GILMER, George H et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195206.1-195206.9, issn 1098-0121Article

Split and sealing of dislocated pipes at the front of a growing crystalGUTKIN, M. Yu; SHEINERMAN, A. G.Physica status solidi. B. Basic research. 2004, Vol 241, Num 8, pp 1810-1826, issn 0370-1972, 17 p.Article

A review of defect generation in the SiO₂ and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

Atomistic theory of mechanical relaxation in fullerene nanotubesYAKOBSON, B. I; SAMSONIDZE, G; SAMSONIDZE, G. G et al.Carbon (New York, NY). 2000, Vol 38, Num 11-12, pp 1675-1680, issn 0008-6223Article

Misfit dislocations in wire composite solidsGUTKIN, M. Yu; OVID'KO, I. A; SHEINERMAN, A. G et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 25, pp 5391-5401, issn 0953-8984Article

Dislocation-point defect interaction effect on local electrical properties of semiconductorsYAKIMOV, E. B.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2293-2307, issn 1155-4320Conference Paper

Kaskadenspritzgiessen vermeidet Bindenähte = Cascade injection moulding avoids weld linesHOMES, W.Kunststoffe. 1996, Vol 86, Num 9, pp 1268-1272, issn 0023-5563, 3 p.Article

A study of defects generated in Czochralski-grown Si during two-step annealingLEFELD-SOSNOWSKA, M; GRONKOWSKI, J; KOWALSKI, G et al.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 4A, pp A42-A46, issn 0022-3727Conference Paper

Scale factor in an experimental model of a highly reinforced compositeCHEKANOV, YU. A; BOGDANOVA, L. M; KOROTKOV, V. N et al.Mechanics of composite materials. 1995, Vol 31, Num 2, pp 114-118, issn 0191-5665Conference Paper

Void growth and fracture in power law creep = Croissance de cavités et rupture dans le fluage en loi puissanceRADHAKRISHNAN, V. M.Scripta metallurgica. 1985, Vol 19, Num 3, pp 259-264, issn 0036-9748Article

Effect of three-body interactions on the formation entropy of monovacancies in copper, silver and gold = Effet des interactions à trois corps sur l'entropie de formation de monolacunes dans le cuivre, l'argent et l'orMAYSEN HÖLDER, W; BAUER, R; SEEGER, A et al.Physics letters. A. 1985, Vol 109, Num 8, pp 393-396, issn 0375-9601Article

Estimation of the vacancy formation enthalpy of metals = Estimation de l'enthalpie de formation de lacunes dans les métauxPATETE, A. R; NEUMANN, J. P.Scripta metallurgica. 1983, Vol 17, Num 8, pp 1047-1048, issn 0036-9748Article